Low-frequency noises in GaAs MESFET’s currents associated with substrate conductivity and channel-substrate junction  

作　　者：DING Yong YAN XiaoLang 

机构地区：[1]Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China

出　　处：《Chinese Science Bulletin》2011年第12期1267-1271,共5页

摘　　要：Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.

关 键 词：砷化镓MESFET 低频噪音 泄漏电流 导电性 衬底 通道 基体 GAAS 

分 类 号：TN386[电子电信—物理电子学]