Nonvolatile memory devices based on organic field-effect transistors  

作　　者：WANG Hong PENG YingQuan JI ZhuoYu LIU Ming SHANG LiWei LIU XingHua 

机构地区：[1]School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China [2]Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

出　　处：《Chinese Science Bulletin》2011年第13期1325-1332,共8页

基　　金：supported by the National Basic Research Program of China (2011CB808404 and 2009CB939703);the National Natural Science Foundation of China (10974074,90607022,60676001,60676008 and 60825403)

摘　　要：Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.Among the many possible device configurations for organic memory devices, organic field-effect transistor （OFET） memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed.

关 键 词：有机场效应晶体管 非易失性存储器 设备配置 聚合物驻极体 存储介质 内存 记忆体 重量轻 

分 类 号：TN32[电子电信—物理电子学]