AgGa_(0.6)In_(0.4)Se_2晶体的制备与表征  

Preparation and Characterization of AgGa_(0.6)In_(0.4)Se_2 Crystals

作　　者：万书权[1] 朱世富[1] 赵北君[1] 陈宝军[1] 何知宇[1] 许建华[1] 刘勇[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《四川大学学报（工程科学版）》2011年第3期194-197,共4页Journal of Sichuan University (Engineering Science Edition)

基　　金：教育部博士点基金资助项目(20040610024)

摘　　要：以高纯单质为原料,按AgGa1-xInxSe2（x=0.4）化学计量配比配料（富1%Se）,在双层石英安瓿中,用机械和温度振荡相结合的方法,合成出高纯单相多晶料。差热分析表明,其熔点和凝固点分别为804.3℃和775.6℃。采用带有籽晶袋、内壁镀碳的双层石英安瓿,用改进的垂直布里奇曼法生长出尺寸为Φ20 mm×60 mm、结构完整的AgGa0.6In0.4Se2单晶体。经X射线衍射仪和红外分光光度计等分析表明,晶体为黄铜矿结构,晶格常数为a=0.602 32 nm,c=1.118 33 nm,其显露面和易解理面为（112）面;厚度约为2 mm的晶片在波长0.836~19.65μm范围内透过率接近或超过60%,禁带宽度约为1.48 eV。结果表明,改进方法生长的AgGa1-xInxSe2晶体的结构完整,光学质量高,可用于中远红外非线性光学器件制备。AgGa0.6In0.4Se2 polycrystalline materials were synthesized by mechanical and temperature oscillation method in a two-layer quartz ampoule using high-purity elements according to the stoichiometry with an excess of 1% Se.The melting and freezing points of the materials were determined to be 804.3 ℃ and 775.6 ℃,respectively,through thermal analysis.A crack-free AgGa0.6In0.4Se2 crystal of Φ20 mm×60 mm was grown by modified vertical Bridgman method in a two-layer carbon coated quartz ampoule with specially designed seed pocket.The crystal was with chalcopyrite structure.The lattice constants of a and c were 0.602 32 nm and 1.118 33 nm,respectively.The reflection faces and cleavage face were（112） faces.A wafer with 2 mm thickness was cut from the as-grown crystal.Its transmittance was up to or more than 60% in a range of 0.836~19.65 μm.Its calculated band gap was about 1.48 eV.The results proved that the grown crystal was of integral structure and high quality,and it can be used for fabrication of mid-far infrared nonlinear optical devices.

关 键 词：硒铟镓银 单晶 性能表征 光学材料 

分 类 号：O782[理学—晶体学]