PECVD制备氮化硅薄膜的研究  

Study on SiNx Thin Film Prepared by PECVD

作　　者：赵崇友[1] 蔡先武[1] 

机构地区：[1]中国电子科技集团公司第四十八研究所,长沙410083

出　　处：《半导体光电》2011年第2期233-235,239,共4页Semiconductor Optoelectronics

摘　　要：采用PECVD法制备了氮化硅薄膜,探讨了沉积参数对氮化硅薄膜折射率的影响和衬底温度对氮化硅薄膜形貌和成分的影响规律。结果表明,不同的NH3流量可改变反应腔体内的氮硅比,对氮化硅的折射率,即减反射性能影响较大;衬底温度是影响氮化硅薄膜形貌和成分的主要因素;在衬底温度达到400℃时,形成了白色团状或岛状的氮化硅膜。In this work,the SiNx thin films were prepared by PECVD and the effect of deposition parameters on the antireflection performance of SiNx thin films and the substrate temperature on its morphology and component were studied.It is found that NH3 flow rate can control the ratio of Si to N of reaction chamber,which affects the antireflection performance.The substrate temperature is the major factor that affects the morphology and component of SiNx thin films.When the substrate temperature is 400 ℃,the SiNx thin film becomes white nodular or island.

关 键 词：PECVD 氮化硅薄膜 减反射性能 

分 类 号：TN305.92[电子电信—物理电子学]