Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer  

作　　者：蒲红斌 曹琳 陈治明 任杰 

机构地区：[1]Department of Electronic Engineering,Xi'an University of Technology

出　　处：《Chinese Physics B》2011年第5期369-373,共5页中国物理B（英文版）

基　　金：Project supported by National Natural Science Foundation of China (Grant No. 60876050);Special Scientific Research Project of Shaanxi Provincial Departments of Education,China (Grant No. 08JK367);the Research Fund for Excellent Doctor DegreeThesis of Xi’an University of Technology,China

摘　　要：A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.

关 键 词：SiCGe/SiC TRANSISTOR charge-compensation responsivity 

分 类 号：TN32[电子电信—物理电子学]