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Stretchable artificial vision sensor with retinomorphic transistorreservoir computing
《Nano Research》2025年第3期486-493,共8页Tongrui Sun Xu Liu Yutong Xu Xinglei Zhao Pu Guo Junyao Zhang Ziyi Guo Yue Wu Shilei Dai Jia Huang 
supported by the the Innovation Program of Shanghai Municipal Education Commission(No.2021-01-07-00-07-E00096);the National Natural Science Foundation of China(Nos.62074111 and 62374115);the National Key Research and Development Program of China(No.2022YFB3203502).
Artificial visual sensors(AVSs)with bio-inspired sensing and neuromorphic signal processing are essential for next-generation intelligent systems.Conventional optoelectronic devices employed in AVSs operate discretely...
关键词：stretchable electronics artificial vision sensors(AVSs) retinomorphic transistors reservoir computing neuromorphic computing 
Adaptive optoelectronic transistor for intelligent vision system被引量：1
《Journal of Semiconductors》2025年第2期53-70,共18页Yiru Wang Shanshuo Liu Hongxin Zhang Yuchen Cao Zitong Mu Mingdong Yi Linghai Xie Haifeng Ling 
the National Key Research and Development Program of China(2021YFA0717900);National Natural Science Foundation of China(62471251,62405144,62288102,22275098,and 62174089);Basic Research Program of Jiangsu(BK20240033,BK20243057);Jiangsu Funding Program for Excellent Postdoctoral Talent(2022ZB402).
Recently,for developing neuromorphic visual systems,adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances a...
关键词：adaptive optoelectronic transistor neuromorphic computing artificial vision 
Recent progress in organic optoelectronic synaptic transistor arrays:fabrication strategies and innovative applications of system integration被引量：1
《Journal of Semiconductors》2025年第2期72-86,共15页Pu Guo Junyao Zhang Jia Huang 
supported by the National Key Research and Development Program of China(2021YFA1101303);the National Natural Science Foundation of China(62374115);the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096).
The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and d...
关键词：organic transistor arrays optoelectronic synaptic transistors neuromorphic systems system integration 
Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access被引量：1
《Journal of Semiconductors》2025年第2期133-142,共10页Xinqi Ma Wenbin Zhang Qi Zheng Wenbiao Niu Zherui Zhao Kui Zhou Meng Zhang Shuangmei Xue Liangchao Guo Yan Yan Guanglong Ding Suting Han Vellaisamy A.L.Roy Ye Zhou 
the National Natural-Science Foundation of China(Grant No.62304137);Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515012479,2024A1515011737,and 2024A1515010006);the Science and Technology Innovation Commission of Shenzhen(Grant No.JCYJ20220818100206013);RSC Researcher Collaborations Grant(Grant No.C23-2422436283);State Key Laboratory of Radio Frequency Heterogeneous Integration(Independent Scientific Research Program No.2024010);the Project on Frontier and Interdisciplinary Research Assessment,Academic Divisions of the Chinese Academy of Sciences(Grant No.XK2023XXA002);NTUT-SZU Joint Research Program.
In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information secu...
关键词：RECONFIGURABLE AMBIPOLAR OPTOELECTRONIC synaptic transistor light assisted burn after reading 
Graphene/F_(16)CuPc synaptic transistor for the emulation of multiplexed neurotransmission
《Journal of Semiconductors》2025年第1期215-223,共9页Zhipeng Xu Yao Ni Mingxin Sun Yiming Yuan Ning Wu Wentao Xu 
supported by the Shenzhen Science and Technology Program(No.JCYJ20210324121002008);the National Science Fund for Distinguished Young Scholars of China(No.T2125005);the National Key R&D Program of China(Nos.2022YFE0198200,2022YFA1204500,and 2022YFA1204504);the Natural Science Foundation of Tianjin(Nos.22JCYBJC01290 and 23JCQNJC01440);the Key Project of Natural Science Foundation of Tianjin(No.22JCZDJC00120);the Fundamental Research Funds for the Central Universities,Nankai University(Nos.BEG124901 and BEG124401);the Guangdong Basic and Applied Basic Research Foundation(No.2023A1515110319);the Key Science and Technology Program of Henan Province(No.242102210171).
We demonstrate a bipolar graphene/F_(16)CuPc synaptic transistor(GFST)with matched p-type and n-type bipolar properties,which emulates multiplexed neurotransmission of the release of two excitatory neurotransmitters i...
关键词：synaptic transistor dual excitatory channels fast-switching plasticity multiplexed neurotransmission 
Force and impulse multi-sensor based on flexible gate dielectric field effect transistor
《International Journal of Minerals,Metallurgy and Materials》2025年第1期214-220,共7页Chao Tan Junling Lü Chunchi Zhang Dong Liang Lei Yang Zegao Wang 
financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254);Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002);the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893);the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive ...
关键词：flexible gate dielectric transistor force sensor impulse sensor force sensor array 
Vinyl flanked amorphous conjugated polymer by Knoevenagel condensation of diketopyrrolopyrrole and indacenodithiophene for flexible transistor
《Science China Materials》2025年第1期110-116,共7页Yanlin Chen Pinyu Chen Shihong Zhou Zhiwei Yang Haijun Long Xianfeng Liang Tianwen Chen Jing Li Luxi Tan Haoli Zhang Lichun Dong Zitong Liu 
National Natural Science Foundation of China (NSFC)(21404107, 22175081, and 22375080)。
Conjugated polymers exhibit exceptional adaptability in flexible thin-film transistors,owing to their inherent flexibility and high charge mobility.Nonetheless,achieving conjugated polymers that demonstrate both high ...
关键词：D-A conjugated polymers DIKETOPYRROLOPYRROLE flexible thin-film transistors indacenodithiophene Knoevenagel condensation 
Recent progress on elemental tellurium and its devices
《Journal of Semiconductors》2025年第1期91-106,共16页Jiachi Liao Zhengxun Lai You Meng Johnny C.Ho 
supported by a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region,China(CityU RFS2021−1S04);the Innovation and Technology Fund(MHP/044/23)from the Innovation and Technology Commission of the Hong Kong Government Special Administrative Region,China.
The rapid advancement of information technology has heightened interest in complementary devices and circuits.Conventional p-type semiconductors often lack sufficient electrical performance,thus prompting the search f...
关键词：elemental tellurium PHOTODETECTOR field-effect transistor gas sensor energy harvesting device 
MoS_(2)synaptic transistor with one-step manufacture
《Science China(Information Sciences)》2025年第1期354-362,共9页Yihao GUO Yang WANG Wenjie DENG Yi WU Jingtao LI Kexin LI Yuehui ZHAO Songlin YU Xiaoting WANG Yongzhe ZHANG Hui YAN 
supported by National Natural Science Foundation of China(Grant Nos.62305013,62334001,U23A20357);China National Postdoctoral Program for Innovative Talents(Grant No.BX20230033).
The synaptic transistor,which is a neuromorphic device with brain-like functions,has garnered significant attention due to characteristics such as low energy consumption,high integration,multiple functions,and high co...
关键词：process optimization artificial synaptic device one-step manufacture synaptic plasticity bionic simulation 
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
《Nano-Micro Letters》2024年第12期134-188,共55页Jing Chen Ming-Yuan Sun Zhen-Hua Wang Zheng Zhang Kai Zhang Shuai Wang Yu Zhang Xiaoming Wu Tian-Ling Ren Hong Liu Lin Han 
supported by the National Key R&D Plan of China(Grant 2021YFB3600703);the National Natural Science Foundation(Grant 62204137)of China for Youth,the Open Research Fund Program of Beijing National Research Centre for Information Science and Technology(BR2023KF02009);the National Natural Science Foundation of china(U20A20168,61874065,and 51861145202);the Research Fund from Tsinghua University Initiative Scientific Research Program,the Center for Flexible Electronics Technology of Tsinghua University,and a grant from the Guoqiang Institute,Tsinghua University.
Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor materials.This capability may overcome the short-channel effect,sp...
关键词：Two-dimensional transistors Dimension limits Performance limits Memory devices Artificial synapses 
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