低温热处理对电子辐照直拉硅中V-O缺陷的影响  

Effect of Low Temperature Heat Treatment on the V-O Defects in the Electron-Irradiated Czochralski Silicon

作　　者：蔡莉莉[1] 陈贵锋[2,3] 张辉[2] 郝秋艳[2] 薛晶晶[2] 

机构地区：[1]华北科技学院基础部物理教研室,北京东燕郊101601 [2]河北工业大学材料学院,天津300130 [3]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《硅酸盐学报》2011年第5期859-862,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(50872028);河北省自然科学基金(E2008-000079);华北科技学院校基金(B009019)资助项目

摘　　要：采用能量为1.5 MeV、辐照温度为100℃、辐照剂量为1.8×1018 e/cm2电子辐照直拉单晶硅;然后对电子辐照样品进行不同温度和时间的低温(200～600℃)热处理。通过辐照样品的Fourier变换红外光谱研究了热处理后样品中的空位–氧相关缺陷的转化情况。结果表明:未经热处理的电子辐照的硅样品中出现了空位–双氧复合体(VO2)缺陷的889 cm–1吸收峰,这是由于辐照温度较高所致。经低温热处理后,在氧含量较低的辐照样品中的VO和VO2缺陷会相互转化,而氧含量较高的样品中VO、VO2吸收峰强度几乎不变。VO2和空位–三氧复合体(VO3)缺陷在450℃热处理30 min后呈现出一定的稳定性。Czochralski silicons were irradiated using 1.5 MeV electrons with the dose of 1.8 × 1018 e/cm2 at 100 ℃.The irradiated samples were subjected to low-temperature（in the range of 200–600 ℃） heat treatment at different temperatures and time.The trans-formation of vacancy–oxygen related defects was investigated by Fourier transform infrared spectroscopy.The results show that the absorption peak（889 cm–1） of the vacancy–dioxygen complex（VO2） defect is formed in the irradiated samples without any heat treatment.This could be due to a higher temperature caused by the electron irradiation.The vacancy–oxygen complex（VO） and VO2 defects could transform each other in irradiated samples with a lower oxygen content,while the intensity of the absorption peaks of VO and VO2 defects unchanged in irradiated samples with a higher oxygen content.In addition,VO2 and vacancy–three oxygen com-plex（VO3） defects showed a stability in the irradiated samples heat treated at 450 ℃ for 30 min.

关 键 词：单晶硅 电子辐照 空位–双氧复合体 辐照缺陷 

分 类 号：TN305.2[电子电信—物理电子学]