电火花线切割单晶硅的损伤层  

Damaged Layer of Monocrystalline Silicon Cut by Wire Electrical Discharge Machining

作　　者：高连[1] 刘志东[1] 邱明波[1] 田宗军[1] 汪炜[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016

出　　处：《硅酸盐学报》2011年第5期874-879,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(50975142);江苏省工业支撑计划(BE200-9161)资助项目

摘　　要：采用截面显微观察法和择优蚀刻法对电火花线切割单晶硅产生的亚表面损伤层进行检测。用光学显微镜观测和分析电火花线切割硅表面沿纵向分层择优腐蚀后的形貌;用能谱仪对腐蚀后的硅表层杂质元素进行分析;用扫描电子显微镜观察和测量腐蚀后硅样品的亚表面裂纹。结果表明:电火花线切割单晶硅损伤层主要由杂质元素重污染层、重熔层和含有高密度位错的弹性畸变层组成;损伤层厚度会随着加工电压和脉冲宽度的增大而迅速增加,受占空比影响较小;在较大的加工参数下,裂纹会成为影响损伤层厚度的主要因素。The damaged layer of monocrystalline silicon cut by wire electrical discharge machining（WEDM） was investigated via cross-section microscopy and preferred etching detection methods.The surface morphology after preferential corrosion along the vertical orientation was observed via an optical microscope.The impurity elements on the surface of the silicon sample corroded were analyzed by an energy dispersive spectroscope.The depth of cracks on the silicon sample subsurface corroded was measured by a scanning electron microscope.The results show that the damaged layer of silicon cut by WEDM mainly appears massive impurity elements,remelted and elastic distortion with a high density dislocation.The damaged layer thickness increases with increasing the voltage and pulse width.The depth of cracks on the subsurface would be one of the major factors affecting the damaged layer thick-ness when the larger processing parameters were used.

关 键 词：电火花线切割 单晶硅 损伤检测 损伤层 裂纹 

分 类 号：TG661[金属学及工艺—金属切削加工及机床]