AgGa_(1-x)In_xSe_2晶体热处理研究  

Heat Treatment Study on AgGa_(1-x)InxSe_2 Crystals

作　　者：许建华[1] 赵北君[1] 朱世富[1] 陈宝军[1] 何知宇[1] 万书权[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2011年第2期304-308,共5页Journal of Synthetic Crystals

基　　金：教育部博士点基金(20040610024)资助项目

摘　　要：结合差示扫描量热曲线（DSC）和相图确定出热处理的温度范围。分别在真空和AgGa1-xInxSe2（x=0.2,0.6,0.8）多晶粉末包埋下,对AgGa0.4In0.6Se2晶体进行了热处理实验,分析了热处理对晶体性能的影响。结果表明：用x=0.6和0.8的多晶粉末包埋,在680℃下保温120 h后再淬火处理的晶片,其红外透过率在550~5500 cm-1波数范围内整体提高到65%以上,光学质量显著提高;EDX和XRD分析表明,采用AgGa0.2In0.8Se2多晶粉末包埋,能够补充晶片中的In缺失,成分更接近AgGa0.4In0.6Se2化学计量比,同时晶片结晶质量也得到明显改善。The heat treatment temperature range was determined on the basis of differential scanning calorimetry results and phase diagrams.Heat treatment of the as-grown AgGa0.4In0.6Se2 crystals were carried out in vacuum and embeded in AgGa1-xInxSe2（x= 0.2,0.6,0.8） powders,respectively.The effects of heat treatments on the properties of the crystal were analyzed.The results show that the IR transmittance of wafers was enhanced above 65% in the region of 550-5500 cm-1 when the AgGa1-xInxSe2（x= 0.6,0.8） powder soaked at 680 ℃ for 120 h and then quenched.The optical quality of the crystal was significantly improved.The EDX and XRD results show that,after the heat treatment in AgGa0.2In0.8Se2 powder,the relative concentration of In in the as-grown wafer could be complemented,and the crystal composition is close to the theoretical stoichiometry.Furthermore,the crystalline quality was remarkably improved.

关 键 词：AgGa1-xInxSe2 热处理 红外透过率 热分析 光学质量 结晶质量 

分 类 号：O782.8[理学—晶体学]