超声研磨SiC单晶材料去除率与表面特征研究  

Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing

作　　者：肖强[1,2] 

机构地区：[1]西安理工大学机械与精密仪器工程学院,西安710048 [2]西安工业大学机电工程学院,西安710032

出　　处：《人工晶体学报》2011年第2期496-499,共4页Journal of Synthetic Crystals

基　　金：陕西省工业攻关项目(2010K09-01)

摘　　要：为了提高SiC单晶片的加工效率,降低表面粗糙度,通过实验对比研究了普通研磨与超声波辅助研磨两种研磨工艺。实验表明,超声波辅助研磨SiC单晶片材料去除率是普通研磨的两倍,表面粗糙度值也有显著降低。本文同时分析了材料去除率提高与表面粗糙度值降低的原因。According to characteristics of the brittleness and hardness of SiC single crystal,the ultrasonic lapping process with the conventional polishing process in the MRR and surface quality was studied.The material removal and surface roughness are studied experimentally with respect to the influence of the processes such as lapping speed and lapping time.The experimental result shows that the material removal rate of ultrasonic lapping is nearly two times that of the conventional lapping,ultrasonic lapping produces a better surface quality.The reason for material removol increasing and surface roughness decreasing was analyzed.

关 键 词：SIC单晶 超声研磨 表面特征 材料去除率 

分 类 号：TG580[金属学及工艺—金属切削加工及机床]