金和铂掺杂单晶硅制备NTCR的研究  

Study of NTCR based on doping Au and Pt into single crystal silicon

作　　者：张希涛[1,2] 陈朝阳[1] 范艳伟[1] 丛秀云[1] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]中国科学院研究生院,北京100039

出　　处：《电子元件与材料》2011年第6期29-32,共4页Electronic Components And Materials

基　　金：新疆维吾尔自治区自然科学基金资助项目(No.2010211B24)

摘　　要：采用开管涂源法,对ρ25为7？.cm的n型单晶硅进行了Au和Pt双重掺杂,制备了低阻高B型NTCR。研究了扩散时间和扩散温度对样品参数的影响,并进行了相关的测试和分析。结果表明：扩散温度θ=1 200℃、扩散时间t≥2 h时,导电类型反型为p型,此时B25/50值不再随扩散时间明显变化,而是稳定在4 000 K左右,ρ25恒定在（2~3）×103？.cm。Using the opening-diffusing method,NTC thermistors with high B value and low resistivity were prepared by doping Au and Pt into n-type single crystal silicon.The effects of diffusion time and diffusion temperature on the parameters of samples were studied.The single crystal silicon thermistors obtained were tested and analyzed.The results show that the conductivity type of the single crystal silicon thermistors have inversed to p-type when the diffusion temperature is 1 200 ℃ and the diffusion time is more than 2 h.At the same time,the B25/50 value of the single crystal silicon thermistors keep stable in 4 000 K with the increase of diffusion time,and the resistivity of thermistors also have a stable value between 2×103 Ω·cm and 3×103 Ω·cm at 25 ℃.

关 键 词：NTC热敏电阻 单晶硅 金 铂 深能级杂质 

分 类 号：TN304[电子电信—物理电子学]