沉积时间对Au/Si-NPA电学特性的影响  

Effects of deposition time on the electrical characteristics of Au/Si nanoporous pillar array

作　　者：富笑男[1] 程莉娜[1] 罗艳伟[1] 刘琨[1] 王信春[2] 

机构地区：[1]河南工业大学理学院,河南郑州450001 [2]河南大学特种功能材料教育部重点实验室,河南开封475004

出　　处：《电子元件与材料》2011年第6期40-42,47,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.10574112);河南省教育厅自然科学基金资助项目(No.2007140003);河南工业大学科研基金资助项目(No.07XJC010);河南工业大学博士基金资助项目(No.2007BS009)

摘　　要：采用浸渍法在硅纳米孔柱阵列(Silicon Nanoporous Pillar Array,Si-NPA)衬底上制得了一系列金/硅纳米孔柱阵列(Au/Si-NPA),不同Au/Si-NPA所用沉积时间不同。通过测试分析所制Au/Si-NPA的I-V特性曲线,研究了沉积时间对Au/Si-NPA电学特性的影响。结果表明:在沉积时间小于30 min时,Au/Si-NPA的正向电流随沉积时间的延长而减小;而当沉积时间超过30 min时,Au/Si-NPA的正向电流随沉积时间的延长而增大。这种电学特性变化主要是由Au/Si-NPA的表面形貌及成分出现变化引起的。A group of Au/silicon nanoporous pillar array（Au/Si-NPA） samples were prepared on silicon nanoporous pillar array（Si-NPA） substrates by immersion method.Different deposition times were used for different Au/Si NPA samples.The effects of deposition time on the electrical characteristics of Au/Si NPA were studied by measuring and comparing the I-V curve of the prepared Au/Si NPA.The results show that the positive current of Au/Si NPA decreases with increasing deposition time when the deposition time is below 30 min,while the positive current of Au/Si NPA shows an opposite trend when the deposition time is above 30 minutes.This change is mainly caused by changes occurring in the surface morphology and composition of Au/Si NPA.

关 键 词：硅纳米孔柱阵列(Si-NPA) I-V曲线 Au/Si-NPA 整流特性 

分 类 号：O472.4[理学—半导体物理]