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作 者:钟伯强[1]
机构地区:[1]中国科学院上海硅酸盐所
出 处:《无机材料学报》1990年第1期73-77,共5页Journal of Inorganic Materials
摘 要:用 EPMA 分析了真空蒸发制得的(Ge_(0.3)S_(0.7))_(100-x)(Sb_(0.4)S_(0.6))_x 和(Ge_(0.42)S_(0.58)_(100-x)(Sb_(0.4)S_(0.6)_x 薄膜样品的组成,发现薄膜中 Ge、S、Sb 的含量与作为蒸发源的相应的块样中的含量不同。同时测量了两类薄膜样品的光隙,发现它们与相应块样的光隙在 x 较小时相差较大,这主要是材料中 S 的含量偏离所致。本文对组成偏离的原因进行了讨论。The composition of films obtained from bulk materials of (Ge_(0.3)S_(0.7))_(100-x)(Sb_(0.4)S_(?))_x and (Ge_(0.42)S_(0.58))_(100_x)(Sb_(0.4)S_(0.6))_x in a vacuum of 10^(-4) Pa were analyzed byusing EPMA.It was found that the content of Ge,S and Sb in film samples wasdifferent from that in bulk ones.The optical gap of the two systems was measured,and the optical gap of the films was apparently different from that of their bulkmaterials,when x was smaller.This was caused by the different S contens in filmsand in bulk samples.The reason for the deviation of the composition in the filmand the bulk samples was discussed in this paper.
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