808nm大孔径垂直腔面发射激光器研究  

808nm vertical-cavity surface-emitting laser with large aperture

作　　者：郝永芹[1] 冯源[1] 王菲[1] 晏长岭[1] 赵英杰[1] 王晓华[1] 王玉霞[1] 姜会林[1] 高欣[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《物理学报》2011年第6期293-297,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076039);教育部新世纪优秀人才支持计划(批准号:NCET-07-0122)资助的课题~~

摘　　要：垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3W.For the carriers-crowded effect in vertical-cavity surface-emitting laser（VCSEL）,the injected current passes mainly through the edge of the circular active region,which results in nonuniformity of the output power density and annular facula with a poor central intensity,especially in large aperture VCSEL.How to restrain carriers-crowded effect becomes a technique problem to develop electrically pumped high power large aperture VCSEL.High power 808 nm VCSEL is demonstrated by introducing a novel structure.And an output power of 0.3 W is achieved at 1 A at room temperature under continuous wave operation.

关 键 词：半导体激光器 垂直腔面发射激光器 高功率 大孔径 

分 类 号：TN248[电子电信—物理电子学]