纳米VOx薄膜在空气中的电学特性退化研究  

Aging in the electrical properties of nanostructured vanadium oxide thin film exposed to air

作　　者：罗振飞[1] 吴志明[1] 许向东[1] 王涛[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《物理学报》2011年第6期622-627,共6页Acta Physica Sinica

摘　　要：采用射频磁控溅射法在氮化硅衬底上沉积纳米VOx薄膜,利用X射线衍射、原子力显微镜分别对薄膜的结晶形态及表面形貌进行表征.研究了纳米VOx薄膜在空气中长时间暴露后的方块电阻、热滞回线等电学特性的变化情况,并分析这些变化给器件带来的影响.利用X射线光电子能谱仪、傅里叶变换红外光谱仪分析对比新制与久置薄膜的组分及分子结构差异.研究表明,暴露在空气中的纳米VOx薄膜方块电阻增大是因为低价钒离子被吸附氧原子氧化成5价钒的缘故,热滞回线形状发生变化的原因是由于薄膜原子与吸附原子、官能团成键后影响了纳米VOx薄膜的分子结构.Radio frequency magnetron sputtering method is used to grow nanostructured VOx thin film on silicon nitride layer.X-ray diffraction and atomic force microscope are used to characterize the crystal structure and surface morphology,respectively.The variations of square resistance and thermal hysteresis loop are studied when the film is exposed to air for a long period of time,and the effects of these variations on the performance of device are analyzed.X-ray photoelectron spectrometer and Fourier transform infrared spectroscopy are employed to investigate the differences in composition and molecular structure between the fresh and aged films.The results indicate that the increase of square resistance is due to the oxidation of vanadium ions with low oxidation states.The reason to cause the change of thermal hysteresis loop is that the molecular structure of nanostructured VOx thin film is affected by the adsorbed atoms and functional groups.

关 键 词：纳米VOx薄膜 磁控溅射 电学特性 退化 

分 类 号：O484.42[理学—固体物理]