SiC一维、准一维纳米材料的制备工艺研究  

Advanced research on synthesis technology of SiC one-dimensional and quasi-one-dimensional nanomaterials

作　　者：李镇江[1] 范炳玉[1] 孟阿兰[2] 张猛[1] 

机构地区：[1]青岛科技大学机电工程学院,山东青岛266061 [2]青岛科技大学化学与分子工程学院,山东青岛266042

出　　处：《功能材料》2011年第6期967-970,975,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50972063;50572041);山东省教育厅科学与研究发展计划资助项目(J06A02);山东省科技攻关资助项目(2006GG2203014);山东省自然科学基金资助项目(Y2007F64);青岛市应用基础研究发展计划资助项目(09-1-3-27-jch);青岛市关键技术重大攻关计划资助项目(09-1-4-21-gx)

摘　　要：综述了近年来SiC一维、准一维纳米材料制备工艺的最新研究进展,重点介绍了模板生长法、化学气相沉积法、熔体生长法、碳热还原法和溶胶-凝胶法的工艺特点,并对不同工艺方法制备的SiC一维、准一维纳米材料的微观形貌、优异性能进行了简要概述,总结了现阶段SiC一维、准一维纳米材料制备工艺研究所面临的问题及发展前景。In this paper,based on the recent research achievements of our group,the latest preparation research progress of SiC one-dimensional and quasi-one-dimensional nanomaterials are reviewed.The technological process advantages of chemical vapor deposition method,melts growth method,carbothermal reduction method and sol-gel method are mainly introduced,and the morphology,outstanding properties and applications of SiC one-dimensional and quasi-one-dimensional nanomaterials obtained by the different preparation methods are briefly summarized.The faced problems and the development trends of the synthesis technology of SiC one-dimensional and quasi-one-dimensional nanomaterials are summarized.

关 键 词：SIC 一维、准一维纳米材料 制备工艺 

分 类 号：TB383[一般工业技术—材料科学与工程]