Bound polaron in a strained wurtzite GaN/Al_xGa_(1-x)N cylindrical quantum dot  

Bound polaron in a strained wurtzite GaN/Al_xGa_(1-x)N cylindrical quantum dot

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作  者:张彬 闫祖威 张敏 

机构地区:[1]School of Physical Science and Technology,Inner Mongolia University [2]College of Sciences,Inner Mongolia Agricultural University [3]College of Physics and Electron Information,Inner Mongolia Normal University

出  处:《Journal of Semiconductors》2011年第6期12-16,共5页半导体学报(英文版)

基  金:supported by the National Natural Science Foundation of China(No10964006);the Research Funds for the Science and Technology Innovation Team of Inner Mongolia Agricultural University(NoNDPYTD2010-7)

摘  要:Within the effective-mass approximation,a variational method is adopted to investigate the polaron effect in a strained GaN/Al_xGa_(1-x)N cylindrical quantum dot.The electron couples with both branches of longitudinal optical-like(LO-like)and transverse optical-like(TO-like)phonons and the built-in electric field are taken into account.The numerical results show that the binding energy of the bound polaron is reduced obviously by the polaron effect on the impurity states.Furthermore,the contribution of LO-like phonons to the binding energy is dominant,and the anisotropic angle and Al content influence on the binding energy are small.Within the effective-mass approximation,a variational method is adopted to investigate the polaron effect in a strained GaN/Al_xGa_(1-x)N cylindrical quantum dot.The electron couples with both branches of longitudinal optical-like(LO-like)and transverse optical-like(TO-like)phonons and the built-in electric field are taken into account.The numerical results show that the binding energy of the bound polaron is reduced obviously by the polaron effect on the impurity states.Furthermore,the contribution of LO-like phonons to the binding energy is dominant,and the anisotropic angle and Al content influence on the binding energy are small.

关 键 词:quantum dot electron-phonon interaction bound polaron STRAIN 

分 类 号:O471.1[理学—半导体物理] TN304.23[理学—物理]

 

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