Double humps and radiation effects of SOI NMOSFET  

作　　者：崔江维 余学峰 任迪远 何承发 高博 李明 卢健 

机构地区：[1]Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences [2]Xinjiang Key Laboratory of Electronic Information Materials and Devices [3]Graduate University of the Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第6期44-46,共3页半导体学报（英文版）

摘　　要：Radiation experiments have been carried out with a SOI NMOSFET.The behavior of double humps was studied under irradiation.The characterization of the hump was demonstrated.The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed.In addition,the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.Radiation experiments have been carried out with a SOI NMOSFET.The behavior of double humps was studied under irradiation.The characterization of the hump was demonstrated.The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed.In addition,the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.

关 键 词：SOI RADIATION double humps 

分 类 号：TN386[电子电信—物理电子学]