ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术  

Optical Thin Films for 980 nm High-power Semiconductor Laser Devices Formed by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

作　　者：谭满清[1] 茅冬生[1] 陈良惠[1] 李玉璋[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083

出　　处：《中国激光》1999年第9期811-814,共4页Chinese Journal of Lasers

摘　　要：介绍了电子回旋共振等离子体化学气相沉积（简称ECRplasmmaCVD）法淀积980nm大功率半导体激光器两端面光学膜的工艺条件，探索了膜系监控的方法和优越性，讨论了这种淀积方法的优点和淀积的光学膜的优良特性。This paper introduces the technology of optical thin films formation by electroncyclotron resonance pthema chemical vapor deposition (ECR plasma CVD) for 980 nm high-Power semiconductor laser devices. A monjforing control method of optical thin filmsproduction is studied and the advantages of the deposition technique and the remarkablecharacteristics of the films are discussed.

关 键 词：ECRplasmaCVD 半导体激光器 介质光学膜 

分 类 号：TN248.4[电子电信—物理电子学]