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作 者:龚正烈[1] 刘冰[2] 姚素薇[3] 张国庆[3] 张卫国[3] 程晓曼[1]
机构地区:[1]天津理工学院光电系,天津300191 [2]南开大学新能源材料化学研究所,天津300071 [3]天津大学化工学院,天津300072
出 处:《中国激光》1999年第10期943-946,共4页Chinese Journal of Lasers
基 金:国家自然科学基金
摘 要:使用脉冲三波长Nd:YAG激光实现了室温下半导体硅上化学沉积Ni-Pd-P纳米膜。SEM结果表明,激光诱导化学沉积Ni-Pd-P纳米膜具有良好的选择性。经STM测试发现,由于激光作用,镀层不仅沿表面生长,而且在厚度方向上也不断增厚。极化曲线测试表明,短时间激光诱导沉积的Ni-Pd-P纳米膜具有优异的析氢催化性能。Using a Q -switched YAG laser with three frequencies, the chemical deposition of a Ni-Pd- P nano- film on the semiconductor silicon substract is obtained at ambient temperature. The test proves that the effect of the deposition by a three-wave1engths laser is better than that of a monochromatic one. The results of SEM show that the film has good selectivity.By STM analyses, the laser-induced film grows not only along the surface, but also along the perpendicular direction. The polarization curves indicate that the laser induced chemicaldeposition of Ni- Pd- P during a short time has high catalytic activity for the hydrogen evolution reaction (HER).
分 类 号:TN24[电子电信—物理电子学]
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