微波激励PIN二极管的时频响应研究  

Research on the Time-frequency Response of PIN Diodes with Microwave Exciting

作　　者：杨成[1] 万双林[1] 刘培国[1] 

机构地区：[1]国防科学技术大学电子科学与工程学院,长沙410073

出　　处：《微波学报》2011年第3期9-12,16,共5页Journal of Microwaves

基　　金：武器装备预研基金

摘　　要：利用一种PIN二极管子电路模型,分析微波激励下的I区电导调制机理,通过ADS软件瞬态、谐波仿真,研究Ⅰ层厚度w和少数载流子寿命τ对PIN二极管时频响应的影响。结果表明,对于同一微波激励,w越大,尖峰泄漏功率越大,导通时隔离度越小;τ越大,尖峰泄漏脉宽越小,导通时隔离度越大。仿真结果与理论分析相符。A PIN diode sub-circuit model is used to analyze I region conductivity modulation mechanism excited by microwave power.The time-frequency response of a PIN diode effected by I layer thickness and minority carrier lifetime is studied with ADS transient,harmonic simulation.The results show that： under a identical excitation,the thicker I region is,the more the spike leakage power is,the little the isolation is,and the longer minority carrier lifetime is,the shorter the spike leakage pulse width is,the more the isolation is.

关 键 词：PIN二极管 电导调制 时频响应 Ⅰ层厚度 

分 类 号：TN12[电子电信—物理电子学]