高性能宽带低噪声放大器的研制  

High-performance Broadband Low-noise Amplifiers

作　　者：祝加秀[1] 

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《现代电子技术》2011年第11期100-103,共4页Modern Electronics Technique

摘　　要：以薄膜混合集成电路为基础,采用AL2O3精细陶瓷做衬底和国际上较先进的共晶工艺,运用宽带内补偿网络和负反馈并用的设计方法,结合理论计算和仿真技术,实现了高指标C波段宽带低噪声放大器的设计,测试结果验证了设计的正确性,为高性能宽带低噪声放大器研制提供了新的设计依据和理论基础。Based on the thin film hybrid integrated circuits,Al2O3fine ceramic is taken as substrates,the international advanced eutectic process is adopted,and the design method utilizing broadband internal compensation networks and negative feedback is used.Thereby,a high C-band Broadband Low Noise Amplifier which meets the index requirements is achieved in combination with theoretical calculations and simulation technology.The test results verify the correctness of the design.It provides a new basis and theoretical basis for the development of high performance broadband low-noise amplifier design.

关 键 词：宽带 低噪声 放大器 薄膜混合集成电路 共晶工艺 

分 类 号：TN722-34[电子电信—电路与系统]