退火对用PLD法制备ZnO薄膜的发光影响  被引量:3

Effect of annealing on optical properties of ZnO thin films

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作  者:魏显起[1] 王勇杰[1] 张仲[1] 

机构地区:[1]济南大学物理科学学院,山东济南250022

出  处:《红外与毫米波学报》2011年第3期224-228,共5页Journal of Infrared and Millimeter Waves

基  金:山东省自然科学基金项目(Y2008A21);济南大学博士基金项目(XBS0833);山东省科技计划项目(2009GG20003028)

摘  要:用脉冲激光沉积(PLD)方法在Si(111)和蓝宝石衬底上制备的氧化锌薄膜,在不同的退火温度和不同的退火氛围中进行了退火处理.退火温度及退火氛围对ZnO薄膜的结构和发光特性的影响用X射线衍射(XRD)谱和光致发光谱进行了表征.实验结果表明,随着退火温度的提高,ZnO薄膜的压应力减小,并向张应力转化.在不同的退火温度退火的薄膜的光致发光谱表明,随着退火温度的提高,薄膜的紫外发射逐渐增强,缺陷发射逐渐减小.在不同退火条件下的退火实验表明,在蓝宝石衬底上、氧气氛围中退火的薄膜,在700℃时呈现无应力,紫外发射强度对可见发射强度的比例最大.Zinc oxide thin films fabricated on si(111) and sapphire substrates by pulsed laser deposition(PLD) were annealed at different temperatures and in different ambient,respectively.The effects of annealing temperature and annealing ambient on structural and optical properties of ZnO thin films have been characterized by X-ray diffraction(XRD) and photoluminescence(PL) spectra.The experimental results show that with the increase of annealing temperature the compressive stress of ZnO thin films is decreased and shifted towards strain stress.PL spectra of ZnO thin films annealed at different temperature indicate that the UV emission is increasing with increasing annealing temperature,and the visible emission is decreasing.The results annealed at various conditions show that the thin film annealed on sapphire substrate at 700℃ in oxygen ambient possesses a small strain stress and the highest ratio of UV emission to visible emission.

关 键 词:PLD ZNO薄膜 应力 晶体结构 光致发光谱 

分 类 号:O469[理学—凝聚态物理]

 

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