GaAs/InGaAs量子点-量子阱光电二极管的光存储特性读出  

Optical Charge Memory of the GaAs/InGaAs Quantum Dot Well Diode

作　　者：肖云钞[1] 郭方敏[1] 

机构地区：[1]华东师范大学信息科学技术学院极化材料与器件教育部重点实验室,上海200241

出　　处：《红外技术》2011年第5期281-283,共3页Infrared Technology

基　　金：科技部重大项目;编号:2006CB932802;2011CB932903;上海市科委基金项目;编号:078014194

摘　　要：通过对特殊设计的GaAs/InGaAs量子点-量子阱光电二极管的I-V和C-V特性测试,验证了器件的光子存储特性,在器件的读出设计中引入了特殊设计的带倒空信号的基于电容反馈互导放大器和相关双采样(CTIA-CDS)型读出电路。在633 nm辐照下,分别改变照度和积分时间进行了非倒空和倒空测试的对比研究,并计算给出了对应的存储电荷变化量,进一步证明了光电器件的光子存储特性。Through testing I-V characteristics and C-V characteristics of specially designed GaAs/InGaAs quantum dot-quantum well device,the optical memory effect is analyzed and verified,,and the CTIA-CDS readout circuit with the dumping signal is introduced..By comparing respectively the results of non-dumping and dumping test in a different light intensity and integration time,the stored charge change is obtained,and the feasibility optical memory of device is further explained.

关 键 词：GAAS/INGAAS 量子点-量子阱光电二极管 光子存储 CTIA读出电路 倒空信号 

分 类 号：TN215[电子电信—物理电子学]