基于衬底运放的2阶温度补偿带隙基准电路  

2^(nd)-Order Temperature Compensated Bandgap Reference Circuit Based on Bulk-Driven Operational Amplifier

作　　者：李沁莲[1] 陈向东[1] 王丽娜[1] 

机构地区：[1]西南交通大学信息科学与技术学院微电子与固体电子研究所,成都610031

出　　处：《微电子学》2011年第3期332-335,340,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60572026);四川省学术与技术带头人培养基金重点资助项目(Q024131103010018);西南交通大学科技发展基金资助项目(2006A05)

摘　　要：采用TSMC 0.25μm CMOS工艺,提出了一种基于衬底驱动放大器的高精度带隙基准(BGR)电路。采用衬底驱动技术的放大器,有效地降低了电源电压;通过PTAT2电流产生电路对基准电路进行2阶温度补偿,有效地降低了输出基准电压的温度系数;采用改进型共源共栅输出级电路,很好地改善了电路的电源抑制比(PSRR)。HSPICE仿真结果显示:在2 V供电电压下,输出基准电压为1.261 V,温度系数为8.24×10-6/℃,低频电源抑制比-为91 dB。整体电路功耗为1.37 mW。A novel high accuracy CMOS bandgap reference（BGR） circuit with 2^nd-order temperature compensation was proposed based on bulk-driven op-amp,which effectively reduced supply voltage of the BGR.PTAT2 current generator was used for 2^nd-order temperature compensation,which effectively reduced temperature coefficient of the output reference voltage.And PSRR of the circuit was improved by modified cascode output-stage.HSPICE simulation showed that,at 2 V supply,the proposed BGR had an output reference voltage of 1.261 V,a temperature coefficient of 8.24×10-6 /℃,and a PSRR of-91 dB,with only 1.37 mW of power.

关 键 词：衬底驱动运放 温度补偿 共源共栅 带隙基准 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.5