钛-硅系快速热退火固相反应机制的研究  

INVESTIGATION OF MECHANISM FOR SOLID PHASE REACTION BY RAPID THERMAL ANNEALING IN Ti-Si SYSTEM

作　　者：陈存礼[1] 李建年 华文玉[2] 

机构地区：[1]南京大学物理系,南京210008 [2]华东工学院应用物理系,南京210014

出　　处：《物理学报》1990年第7期1143-1149,共7页Acta Physica Sinica

摘　　要：钛膜在10^(-7)Torr真空中用电子束蒸发沉积在硅单晶片上,以快速热退火方式进行团相反应。转靶X射线衍射分析发现,540—600℃退火后,有两个亚稳相Ti_5Si_4的衍射峰。延长退火时间,第一成核相Ti_5Si_4可持续存在到钛被消耗完,随即转变成稳定相TiSi_2。退火温度高于640℃,形成稳定相TiSi_2。薄层电阻和喇曼散射的测量研究结果表明,与X射线衍射有很好的对应。207和244cm^(-1)波数处的两个喇曼峰为TiSi_2的特征喇曼峰,而270,297和341cm^(1)的三个喇曼峰似乎是由Ti_5Si_4引起。Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10-7 Torr. Solid phase reaction results through rapid thermal annealing. After annealed at 540-600℃, two metastable phase diffraction peaks of Ti5Si4 are observed in X-ray diffraction (XRD) pattern. Prolonging the annealing time, the first nucleated phase Ti5Si4 remains unchanged until titanium is completely consumed, then it transforms into a stable phase TiSi2. When the annealing tcmpeiature is above 640℃, a stable phase TiSi2 is formed. The researches of sheel resistance and Raman scattering give the results which are in good agreement with XRD. The two Raman pea' s at 207 and 244 cm-1 are characteristic Raman peaks of TiSi2, but the other three Raman peaks at 270, 297 and 341 cm-1 are likely attributed

关 键 词：钛-硅系 固相反应 退火 VLSI 薄膜 

分 类 号：TN305.2[电子电信—物理电子学]