硅中Jahn-Teller畸变的磷-空位复合缺陷的电子结构  

ELECTRONIC STRUCTURE OF JAHN-TELLER DISTORTED PHOSPOROUS-VACANCY COMPLEX IN SILICON

作　　者：申三国[1] 范希庆[1] 

机构地区：[1]郑州大学物理系,郑州450052

出　　处：《物理学报》1990年第10期1653-1660,共8页Acta Physica Sinica

基　　金：河南省基础及应用科学研究所和河南省科学技术委员会的资助

摘　　要：本文采用扩展的缺陷势,利用一个紧束缚的Koster-Slater格林函数方法,确定了磷-空位缺陷的波函数为深能级E的函数,以深能级的实验值为输入参数,得到的波函数定量地描述了EPR和ENDOR实验资料,特别是,理论给出空位的四个近邻原子上的超精细相互作用常数α和b,同实验符合得很好。Under the extended defect potential approximation, the electronic wave function which is a function of the PV defect energy has been derived using a tight binding Koster-Slater Green function technique. Taking the experimental value of the defect energy level as input parameter, the obtained wave function describes quantitatively the data of the electron paramagnetic resonance and electron-nuclear double resonance. Especially, the hyperfine interaction constants of the four nearest neighbor atoms around the vacancy given by the theory, are in good agreement with the experiment.

关 键 词：硅 磷 空位 缺陷 电子结构 

分 类 号：O562.[理学—原子与分子物理]