射频微机电并联电容式开关的参数性能分析  

Analysis of Shunt RF MEMS Capacitive Switches Parameters

作　　者：甄可龙[1] 吕善伟[1] 张岩[1] 黄广君[2] 

机构地区：[1]北京航空航天大学电子信息工程学院,北京100191 [2]河南科技大学电子信息工程学院,河南洛阳471003

出　　处：《河南科技大学学报（自然科学版）》2011年第3期25-29,109-110,共5页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家"863"计划基金项目(2008AA12A216);国家自然科学基金项目(60901001)

摘　　要：射频微电子机械系统RF MEMS开关的高隔离度与低插入损耗特性,同开关自身的结构参数密切相关。为了得到更好的开关性能,在设计过程中有必要对射频MEMS开关的相关参数进行优化。本文用ADS和HFSS仿真设计软件,对射频MEMS并联电容式开关的微波特性进行了分析和仿真,研究了MEMS开关的等效电路参数和结构参数的变化对RF MEMS开关微波特性的影响。仿真结果表明:等效电容参数和MEMS开关桥宽度是影响开关性能的关键参数,当开关的等效电容参数增加20 pF,或MEMS桥的宽度增加40μm时,RF MEMS开关的插入损耗则可能增加10 dB以上。For the purpose of obtaining high isolation and low insertion,it is important to optimize the structure parameters of the RF MEMS switch in design process,because the microwave characteristic of the switch significantly depends on the structural parameters.In this paper,the microwave characteristic of shunt RF MEMS capacitive switches was studied by ADS and HFSS software.The effect of the equivalent circuit model parameters and the structure parameters of the switch's structure model on the microwave characteristic was summarized.The results show that the shunt capacitance and the width of the MEMS switch are the important parameters for the design of RF MEMS switch.When the shunt capacitance increases by 2 pF or the width of the MEMS switch increases by 40 μm,the RF MEMS switch's insertion loss will increase by 10 dB.

关 键 词：RF MEMS 开关 插损 隔离度 共面波导 

分 类 号：TN63[电子电信—电路与系统]