X波段GaAs PHEMT单片有源上变频器设计  

Design of X-band GaAs PHEMT Active Upmixer MMIC

作　　者：宋静[1] 陈兴国[1] 唐亮[1] 

机构地区：[1]中国电子科技集团公司第38研究所,安徽合肥230031

出　　处：《合肥师范学院学报》2011年第3期45-48,共4页Journal of Hefei Normal University

摘　　要：采用0.25μm GaAs PHEMT工艺研制了一个X波段单片有源上变频器。电路集成了Gilbert混频电路、RF补偿放大器和LO缓冲器,在提高了单片电路集成度的同时,获得了较好的性能指标。实际测试结果表明:变频增益大于10dB;各端口匹配良好,在工作频带内回波损耗小于10dB;1dB增益压缩点输出功率达到4dBm;所需本振功率为-3dBm。A monolithic X-band active upmixer has been developed by adopting the 0.25μm GaAs PHEMT technology.The monolithic circuit integrates Gilbert cell mixer,RF compensated amplifier and LO buffer to enhance the integration of elementary circuits and achieves good performances.The measure results show： the frequency conversion is higher than 10 dB;all ports are well matched with return loss less than-10 dB in the operating frequency;Output power of 1 dB compression point reaches 4dBm;LO driver power is as low as-3dBm.

关 键 词：单片有源上变频器 Gilbert混频单元 GAAS PHEMT工艺 变频增益 

分 类 号：TN773[电子电信—电路与系统]