基于电感耦合氧等离子体金刚石膜表面修饰的功率优化  

Optimization of etching power for surface-modified diamond films based on inductively coupled oxygen plasma

作　　者：张楷亮[1] 王莎莎[1] 王芳[1] 吴小国[1] 孙大智[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点实验室,天津300384

出　　处：《光电子．激光》2011年第7期1034-1037,共4页Journal of Optoelectronics·Laser

基　　金：国家自然基金资助项目(60806030);天津市科技计划资助项目(08JCYBJC14600,10SYSYJC27700);天津市高等学校科技发展基金计划资助项目(ZD200709)

摘　　要：采用电感耦合等离子体(ICP)氧等离子体刻蚀金刚石膜,探寻金刚石膜表面处理的方法。通过分析不同ICP射频源功率和不同偏压源功率下的刻蚀速率,研究了金刚石膜刻蚀的机理作用;通过拉曼光谱进行表征,分析刻蚀前后sp2与sp3的含量。结果表明,在ICP氧等离子体刻蚀的过程中,sp3键部分转化为sp2键;刻蚀后表面粗糙度降低;当刻蚀功率较高时,可同时刻蚀sp2和sp3键,而且刻蚀sp2的速率强于sp3。在刻蚀实验及机理探索基础上优化了刻蚀功率。In this paper,the etching of diamond film is done by inductively coupled oxygen plasma to explore the treatment and modification methods for the diamond film surface.Based on the analysis with different etching rates under different inductively coupled plasma（ICP） RF source power values and bias RF source power values,the etching mechanism is explored.And the relative contents of sp2 and sp3 were characterized by Raman spectra.Etching results show that part of the sp3 bonds change into sp2 bonds during the etching process of diamond films by inductively coupled oxygen plasma,and the surface roughness is reduced after etching.When the diamond films are etched under high power,both sp2 and sp3 bonds are etched,and the etching rate of sp2 bonds is higher than that of the sp3 bonds.Finally the ICP power was optimized based on etching experiments and possible mechanism.

关 键 词：金刚石薄膜 等离子体 电感耦合等离子体(ICP) 刻蚀 

分 类 号：O484.4[理学—固体物理]