高功率垂直腔面发射激光器的湿法腐蚀工艺  

The Wet Etching Process of High-power VCSEL

作　　者：侯立峰[1] 冯源[2] 杨永庄[1] 瞿建新[1] 赵英杰[2] 

机构地区：[1]装甲兵技术学院电子工程系,吉林长春130117 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2011年第6期598-602,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60677009)资助项目

摘　　要：为提高高功率垂直腔面发射激光器(VCSEL)光电性能,对氧化限制型高功率VCSEL湿法腐蚀工艺进行了实验研究。实验中采用H3PO4系溶液替代以往制备此类器件常用的H2SO4系溶液作为高功率VCSEL外延片的腐蚀液,利用扫描电镜(SEM)研究了腐蚀后外延片氧化窗口的腐蚀形貌变化与腐蚀液浓度的关系,消除了以往采用H2SO4系溶液腐蚀时,高功率VCSEL氧化层侧壁出现的"燕尾"结构;通过改变湿法腐蚀工艺的外部温度条件和腐蚀液的浓度配比,实验研究了高功率VCSEL湿法腐蚀速率规律,最后得出了制备高功率VCSEL时湿法腐蚀工艺的最佳外部温度条件与腐蚀液的最佳浓度配比。The processing of the wet etching have been studied with experiments in oxidation confinement high-power vertical-cavity surface-emitting lasers（VCSEL） in order to improve opto-electric characteristics of high-power VCSEL.In the experiments we use the H3PO4 liquid as etching liquid in stead of H2SO4 liquid.The relation between the etching shape change of the epitaxial wafer with etching liquid consistency by scanning electron microscope（SEM）,we eliminated the ＂dovetail＂ structure that conventionally happened on the lateral side of the etched wall of high-power VCSEL oxidation layer;By chaging the etching liquid content and the etching condition temperature,we have studied the law of the wet etching rate.At last,we have obtained the best temperature condition and etching liquid concentration of wet etching through the experiment.

关 键 词：激光技术 垂直腔面发射激光器 湿法腐蚀 腐蚀速率 

分 类 号：TN248.4[电子电信—物理电子学]