多施主掺杂PTC陶瓷材料的研究  被引量:3

STUDIES ON PTC CERAMIC MATERIALS DOPED BY MULTIPLE-DONOR

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作  者:马建丽[1] 曲远方[2] 马卫兵[2] 

机构地区:[1]天津城市建设学院,300381 [2]天津大学,300072

出  处:《热固性树脂》1999年第4期54-58,共5页Thermosetting Resin

基  金:国家九五科技攻关项目

摘  要:本文在双施主掺杂高TcBaTiO_3基PTC陶瓷材料的基础上,对BaTiO_3的A、B、O位同时进行离子置换以实现多施主掺杂,同时还研究了烧结温度对阻温特性的影响。研究结果表明,多施主掺杂试样的烧成温度对p-T性能影响很大,在一定配方及工艺条件下,获得的PTC陶瓷材料的室温电阻率变化不大,升阻比明显提高。BaTiO_3-based PTC ceramic materials with high To, doped by two donors, had been studied in this paper. Then A, B and O sites substituted in the PTC seramic material had also been studied in the meantime, in order to achieve multiple-donor doping, and the influence of sintering temperature on the resistivity-temperaure characteristic had been studied. It showed that the resistivity-temperature characteristic of PTC ceramic materials doped by multiple-donor was influenced violently by sintering temperature. The room temperature resistivity of the PTC ceramic material did not change very much under given conditions of prescription and technology, but the R_(max)/R_(min). was improved obviously.

关 键 词:多施主掺杂 电阻率 热敏电阻 陶瓷半导体 

分 类 号:TN304.82[电子电信—物理电子学] TN370.53

 

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