II-VI族化合物半导体量子结构材料和器件的研究与发展  

Development of II-VI Semiconductor Quantum Structure Materials and Devices

作　　者：郝建伟[1] 查钢强[2] 介万奇[2] 

机构地区：[1]北京航空航天大学,北京100191 [2]西北工业大学材料学院,西安710072

出　　处：《材料工程》2011年第6期87-91,共5页Journal of Materials Engineering

基　　金：国家自然科学基金资助项目(50872111,50902113)

摘　　要：简要介绍了量子结构材料与器件中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程。以II-VI族化合物半导体为例,介绍了量子尺寸效应对于激子束缚能的影响。以此为基础,综述了II-VI族化合物半导体量子阱、量子点等量子结构材料以及量子结构器件在光电探测、发光器件与太阳能电池领域的研究现状,并总结了II-VI族化合物半导体量子结构材料与器件的发展趋势。The basic concepts of quantum structure materials and devices were summarized,and the definition of quantum structure and the quantum size effect were introduced.Take example for the II-VI compound semiconductor,the effect of the quantum size effect upon exciton binding energy was introduced.Therefore,the II-VI compound semiconductor quantum structure materials such as quantum wells and quantum dots,and the application development of which in photoelectric detection devices,light emitting devices and solar cell field were analyzed generally.

关 键 词：Ⅱ-Ⅵ族化合物半导体 量子结构 激子效应 量子尺寸效应 

分 类 号：TN304.25[电子电信—物理电子学] O472[理学—半导体物理]