808nm连续波2000W半导体激光器垂直叠阵  

808 nm CW 2000 W semiconductor laser vertical stack

作　　者：张恩涛[1] 张彦鑫[1] 熊玲玲[1] 王警卫[1] 康利军 杨凯 吴迪 袁振邦 代华斌 刘兴胜[1,2] 

机构地区：[1]中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119 [2]西安炬光科技有限公司,陕西西安710119

出　　处：《红外与激光工程》2011年第6期1075-1080,共6页Infrared and Laser Engineering

基　　金：中国科学院科研装备项目(YZ200844)

摘　　要：为了全面提高大功率半导体激光器的性能和功率,采用双面散热技术,优化了大功率半导体激光器垂直叠阵和单bar器件的热管理和热设计,使得808 nm单bar半导体激光器在连续波工作模式下的功率达到100 W;808 nm 20 bar垂直叠阵功率达到2 000 W。对微通道液体制冷大功率半导体激光器叠阵和单bar半导体激光器器件的LIV特性、光谱特性、近场光斑、近场非线性效应、远场发散角、快慢轴准直后激光束的指向性做了测试和分析,并在连续波模式下对单bar 808 nm微通道液体制冷半导体激光器做了寿命测试及可靠性评估分析,结果显示器件的工作性能良好。该大功率半导体激光器垂直叠阵未来的应用前景广阔。In order to promote the performance and power of high-power semiconductor lasers,double-faced thermal conduction technology was used,thermal design and packaging design were theoretically analyzed and optimized,which greatly improved the power of micro-channel water cooled vertical stack and single bar semiconductor lasers.The power of 808 nm 20 bars vertical stack semiconductor laser reaches 2 000 W under the continuous wave（CW） condition,the average power of each bar reaches 100 W.The experimental data of LIV character,spectrum character,facula and smile of near field,the spreading angle and direction of semiconductor laser were obtained which showed the excellent performance of this semiconductor lasers.Also the life-time test experiment was carried out and the result shows the good performance.The high-power semiconductor lasers will be used in many application fields.

关 键 词：高功率半导体激光器 垂直叠阵 微通道液体冷却 连续波 

分 类 号：TN248.4[电子电信—物理电子学] TN365