光刻胶光学性质的光谱椭偏测量方法研究  

Study on Measuring Method of Optical Characteristics of Photoresist by Spectroscopic I-Ilipsometry

作　　者：刘文德[1] 陈赤[1] 陈熙[2] 于靖[1] 郑春弟[1] 王煜[1] 

机构地区：[1]中国计量科学研究院,北京100013 [2]中国科学院半导体研究所纳米光电子实验室,北京100083

出　　处：《计量学报》2011年第4期381-384,共4页Acta Metrologica Sinica

基　　金：国家自然科学基金（10774143）;中国计量科学研究院基本科研业务费（23-AKY1012）

摘　　要：利用相调制型光谱椭偏仪研究了光刻胶光学常数的测量方法，针对测量过程中光刻胶曝光控制优化了测量方案和仪器参数。对常见的$9912正型光刻胶，给出了曝光前后275～650nm波段的光学常数。并采用动态椭偏法测量了所需波长下曝光前的光学常数。实验结果表明：该测量方法适用于光刻胶在紫外一可见．红外宽波段的光学性质研究，在光刻模拟、新型光刻胶材料研制及其光学性质表征等领域有重要实用价值。By means of phase-modulated ellipsometer, the method for measuring optical constants of photoresist is described. The test scheme and instrument parameters for testing process of photoresist are optimized. For commonly used positive $9912 photoresist, the optical constants for 275 -650 nm before/after the exposure are measured, and the dynamic ellipsometry is used to obtain the values before the exposure at wavelengths of interest. The experimental results indicate：the method provided is applicable for the research of photoresist in UV-VIS-NIR spectral range and may find important application in the optical lithography simulation, the development and characterization of new-type pholoresist materials.

关 键 词：计量学 光刻胶 曝光 光学常数 光谱椭偏法 

分 类 号：TB96[机械工程—光学工程]