低强度半导体激光对神经再生作用及其机制的研究进展  

Mechanism of Low Level Semiconductor Laser Therapy on Injured Nerve Regeneration:a Research Progress

作　　者：林阳阳[1] 苑秀华[1] 

机构地区：[1]中国医科大学附属第一医院康复科,沈阳市110001

出　　处：《中国激光医学杂志》2011年第3期183-187,共5页Chinese Journal of Laser Medicine & Surgery

基　　金：辽宁省自然基金课题(20061007)

摘　　要：临床上神经损伤非常常见,如何促进其再生、引导轴突向靶器官的延伸以及再生后的功能恢复是人们关注的焦点。除神经营养因子和一些化学药物外,许多物理因子也有促进神经再生的作用。先前文献证明低强度半导体激光利用光量子能量可以促进损伤后神经的再生。但是由于实验模型和治疗参数的不同难以比较其治疗作用。现就低强度半导体激光促进神经再生作用及其机制的研究进展加以综述。Nerve injury is very common in clinics.It is a focus that how to promote its regeneration,prolongation,and function restore.Besides neurotrophic factors and chemical medication,many physical factors hare also promoting the nerve regeneration action.Former studied showed that low level semiconductor laser therapy can promote injured nerve regeneration.It is still difficult for one to compare studies about the action on the regeneration of injured nerve because the experimental models and duration of treatments are very distinct.In this review the research progress in the action mechanism of low level semiconductor laser therapy on injured nerve restoration and regeneration has been summarized in order to provide a theory basis clinically.

关 键 词：激光 外周神经 中枢神经 

分 类 号：R741[医药卫生—神经病学与精神病学]