电子辐照对开关电源中功率双极晶体管损耗的影响  

The Effect of Electron Radiation on the Losses of Power Bipolar Transistor Used in Switching Power Supply

作　　者：王林[1] 王燕[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《电子器件》2011年第3期237-241,共5页Chinese Journal of Electron Devices

摘　　要：功率双极晶体管的损耗是开关电源总损耗中的最多的器件之一,采用10 M eV电子辐照来降低功率双极晶体管的下降延时,以此来降低功率双极晶体管的关断损耗。在一个典型的充电器开关电源中,85 V交流输入电压下,功率双极晶体管总损耗最多降低了42%,系统效率提高了2.1%。The losses of power bipolar transistor are one of the largest parts of the total losses in the switching power supply.We use 10MeV electron irradiation to reduce the turn-off time and the turn-off losses of the power bipolar transistor.In a typical battery charger switching power supply,on the conditon of 85V AC input voltage,the total losses of the power bipolar transistors reduces down to 42%,and the system efficiency is improved by 2.1%.

关 键 词：开关电源 电子辐照 功率双极晶体管 开关晶体管 关断损耗 

分 类 号：TN322.8[电子电信—物理电子学]