Parylene F薄膜介电材料的制备与研究  

Preparation and study of dielectric material—the film of Parylene F

作　　者：赵宗峰[1] 鲜晓斌[1] 唐贤臣[1] 吉祥波[1] 

机构地区：[1]中国工程物理研究院,四川绵阳621900

出　　处：《功能材料》2011年第B06期477-480,共4页Journal of Functional Materials

摘　　要：通过真空化学气相沉积方法制备了Parylene F薄膜,采用扫描电镜(SEM)和原子力显微镜(AFM)观察了表面形貌,并用红外光谱(IR)、X射线光电子能谱(XPS)及热重分析仪(TGA)等分析手段对薄膜组成与性能进行了表征,阻抗分析仪测试了薄膜的介电参数。研究结果表明化学气相沉积方法制备的Parylene F薄膜是一种致密光滑、性能较优、易于成型且具有较大潜在应用前景的介电材料。In this paper,a new dielectric material the film of Parylene F was prepared through the chemical vapor deposition（CVD）. The surface morphology of film was characterized by SEM and AFM. The composition and performance of the film was tested by IR, XPS and DSC. The results showed that Parylene F was a kind of dielectric material with potential value in application.

关 键 词：介电材料 PARYLENE F薄膜 化学气相沉积 

分 类 号：TQ316[化学工程—高聚物工业]