氩等离子体诱导量子阱混合技术  

Argon plasma induced quantum well intermixing technology

作　　者：彭盛华[1] 张欣[1] 何建军[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《浙江大学学报（工学版）》2011年第6期1057-1061,共5页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金资助项目(60788403);浙江省自然科学基金资助项目(2008R10008)

摘　　要：研究了基于InGaAsP/InP应变多量子阱片的氩等离子体诱导量子阱混合工艺方法.当等离子刻蚀机(ICP)的射频(RF)功率为480W、ICP功率为500W、处理时间为1min时,ICP处理过程中氩(Ar)等离子体对量子阱片的刻蚀深度小于牺牲层的厚度500nm,晶格缺陷将产生在牺牲层内.样品在纯氮气条件、不同温度下快速退火2min,缺陷扩散至量子阱层诱发量子阱混合.不同实验条件的样品PL光谱表明:随着退火温度和ICP功率的增加,量子阱片的光致发光谱(PL)峰值波长会发生显著的蓝移,分别在750℃和500W时趋于饱和;此时获得的蓝移为110nm,PL强度为原生片的55%,量子阱层仍保持了较好的晶格特性.Argon plasma induced quantum well intermixing was investigated for an InGaAsP/InP multi-quantum well structure.When the radio frequency（RF） power was fixed at 480 W,inductively coupled plasma（ICP） power at 500 W and ICP treatment time at 1 min,the etching depth of the quantum well samples was less than 500 nm,and the defects induced by the ICP were confined in the sacrificial layer.The samples were then annealed in nitrogen atmosphere for 2 min at different temperatures,and the defects diffused to the quantum well layers to induce quantum well intermixing.The photoluminescence（PL） of experimental samples showed that with the increasing ICP power and annealing temperature,the blue-shift of the PL peaks of the quantum well samples increased and this trend saturated when the ICP power reached 500 W with the annealing temperature at 750 ℃.Under this condition,the blue shift of PL peak as large as 110 nm was obtained and the PL intensity was 55% of the as-grown sample,which indicates the intermixed quantum well samples are still in good crystal lattice quality.

关 键 词：量子阱混合 氩等离子体 InP牺牲层 光致发光(PL) 退火温度 ICP功率 

分 类 号：TN256[电子电信—物理电子学]