基于AlN掩蔽膜的半导体激光器温度场分布研究  

Temperature Distribution Analysis of 808nm Wavelength Semiconductor Lasers with AlN Insulated Layers

作　　者：徐扬[1] 高欣[1] 乔忠良[1] 邹微微[1] 周路[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《长春理工大学学报（自然科学版）》2011年第2期59-61,共3页Journal of Changchun University of Science and Technology(Natural Science Edition)

摘　　要：运用ANSYS软件建立了808nm高功率半导体激光器内部热源分析模型,并对其进行瞬态温度及稳态温度模拟,讨论了SiO2及AlN材料掩蔽膜对器件内部温度场分布的影响。结果表明,有源区的平衡温度由器件的散热特性决定,用AlN材料代替SiO2材料制备掩蔽膜,能降低器件内部温度,更好的满足半导体激光器高效率工作的需要。An internal heat source model for 808nm wavelength semiconductor lasers has been established using ANSYS software,the transient and steady-state temperature properties has been simulated,and effect on the internal temperature field distribution of devices using SiO2 or AlN insulated layers has been discussed.It has been demonstrated that the equilibrium temperature of active region is determined by the heat dissipation characteristics of devices,devices with AlN insulated layer has a lower internal temperature compared with devices by SiO2 layer,and high efficient operation will be expected for semiconductor lasers with AlN insulated layer.

关 键 词：半导体激光器 热分布 ANSYS软件 掩蔽膜 

分 类 号：TN248.4[电子电信—物理电子学]