Study on PECVD SiO_2 /Si_3 N_4 double-layer electrets with different thicknesses  

作　　者：ZOU XuDong ZHANG JinWen 

机构地区：[1]National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing 100871, China

出　　处：《Science China(Technological Sciences)》2011年第8期2123-2129,共7页中国科学（技术科学英文版）

基　　金：supported by the National Basic Research Program of China ("973" Program) (Grant No. 2009CB320300)

摘　　要：In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.

关 键 词：PECVD SiO 2 /Si 3 N 4 double layer ELECTRETS thicknesses 

分 类 号：TN304.055[电子电信—物理电子学] TM278[一般工业技术—材料科学与工程]