等离子体对OLED阳极进行处理的研究现状  

Research Status of Different Plasma Treatments on OLED Anode

作　　者：殷景志[1] 常玉春[1] 马艳[1] 高福斌[1] 刘阳[1] 王一丁[1] 杜国同[1] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学实验区吉林大学电子科学与工程学院,长春130012

出　　处：《半导体光电》2011年第3期299-303,342,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60676039);国家"863"计划资助项目(2007AA03Z446;2009AA03Z442;2009AA03Z442)

摘　　要：大多数OLED都用ITO做阳极,为了提高ITO的功函数、改善ITO表面的平整度和减少C的污染,通常要在生长有机材料前对ITO表面进行处理。介绍了目前用等离子体对OLED阳极进行处理的研究现状,给出了Ar、O2、H2、N2、N2O和CF4等离子体处理ITO后对平整度、功函数、接触角和OLED特性等的影响,在他人研究基础上得出结论:用等离子体对OLED阳极进行处理其器件特性不仅与处理ITO表面的气体种类有关,也与产生等离子体的条件有关。采用正交试验方法可优化等离子体处理工艺参数,获得高性能的OLED。ITO is used as the anode for most OLEDs.In order to improve its work function and smoothness and reduce C pollution,usually the ITO surface is treated before growing organic materials.In this paper,the current research situation of using plasma to process the anode of OLED is introduced.The effects of Ar,O2,H2,N2,N2O and CF4 plasma treatments on the smoothness,work function,contact angle and OLED characteristics are analyzed.In accordance with the results obtained by other researchers,it is concluded that the OLED characteristics enhancements by the plasma treatment not only depend on the kind of plasma,but also on the conditions of obtaining plasma.The plasma process parameters can be optimized by orthogonal test method so as to obtain high performance OLEDs.

关 键 词：ITO 等离子体 接触角 平整度 功函数 

分 类 号：O47[理学—半导体物理]