LED静电损伤在老化过程中的变化趋势  

Study on LED Reliability in the Aging Process

作　　者：袁晨[1,2] 代文文[1] 陈楚[1] 严伟[1,2] 

机构地区：[1]北京大学软件与微电子学院,北京100871 [2]上海北京大学微电子研究院,上海201203

出　　处：《半导体光电》2011年第3期339-342,共4页Semiconductor Optoelectronics

摘　　要：针对发光二极管(LED)的可靠性问题,将抗静电测试与高温老化实验结合,将蓝绿色发光材料制成的二极管分组,测试其经过老化过程后的光色参数变化。实验数据表明,蓝绿色LED裸片与封装样品老化过程中的衰减趋势有一定差异,老化程度与封装材料和发光材料的搭配方式有关。对于未被静电损伤的芯片,经过老化过程后,并没有出现静电损伤被放大导致功能性失效的现象,静电对其参数衰减无明显影响,与单一的老化实验趋势相似。对于经过静电击打后出现异常,无法正常发光的芯片,高温老化实验产生了使其迅速损坏和复原的情况。To study the reliability of LEDs,antistatic tests and experiments on high-temperature aging were performed.The LEDs fabricated with blue-green emitting materials were divided into different groups to study the variations of the LED photo-electricity parameters in the aging process.Experimental results show that the degrading trends of the LED barechips and the packaged chips are different,and the aging degree is related with both the packaging materials and the emitting materials.For the chips without the damage of static electricity,functional failure does not appear after the aging process,and the static electricity has little effect on the parameter attenuation,which is similar with the results of single aging experiment.For the chips who can not emit normally after static hitting,rapid damages and recoveries happened in the aging experiments.

关 键 词：LED 阿伦尼斯 ESD 可靠性 

分 类 号：TN321.8[电子电信—物理电子学]