分压-自偏压共源放大电路的Multisim仿真研究  

Multisim Simulation of Partial Pressure and Self-bias Pressure Common Source Amplification Circuit

作　　者：李永清[1] 

机构地区：[1]铁岭师范高等专科学校理工学院,辽宁铁岭112000

出　　处：《现代电子技术》2011年第13期189-191,共3页Modern Electronics Technique

基　　金：辽宁省教育科学"十一五"规划项目(JG08DB225)

摘　　要：针对场效应管电路分析中不同元件性能参数不同而导致一些理论计算复杂、繁琐,并且难于理解的情况,通过对N沟道增强型MOS场效应管组成的分压-自偏压共源放大电路的理论研究,利用Multisim仿真软件对电路实际工作情况进行模拟,根据二者结果的对比,研究并提出了分压-自偏压共源放大电路的Multisim电路仿真研究的方法。Since different components have different performance parameters which may lead to some complex theoretical calculations and situation which is cumbersome and difficult to understand in the analysis of FET circuit, a method of Muhisim simulation research for the partial pressure ＆ self-bias voltage common source amplification circuits is proposed, according to the theoretical study of the partial pressure ＆ self-bias voltage common source amplification circuits composed of N-channel enhancement mode MOS FET after the simulation of the actual working condition of the circuits by the aid of Multisim simulation software.

关 键 词：场效应管 分压-自偏压共源极放大电路 MULTISIM 仿真分析 

分 类 号：TN710-34[电子电信—电路与系统]