InGaP/GaAs异质结价带不连续性的直接测量  

Direct Measurement of Valence band Discontinuity of InGaP/GaAs Heterojunction

作　　者：徐红钢[1] 陈效建[1] 高建峰[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1999年第3期241-245,共5页Research & Progress of SSE

基　　金：国家自然科学基金

摘　　要：用Ｋｅｉｔｈｌｅｙ Ｓ９００Ａ 型半导体自动参数测试仪测量了用ＭＯＣＶＤ方法生长的ＩｎＧａＰ／ＧａＡｓ异质结样品的界面ＣＶ的分布。用多项式逐段拟合的方法，转化得到界面浓度的分布，最后计算得到该体系的价带不连续性ΔＥｖ 为３１６ ｍ ｅＶ，约相当于０．６９The C V profile of InGaP/GaAs heterojunction grown by MOCVD method has been measured by Keithley S900A semiconductor parametric test system. After transfering it to the hole interface concentration profile by polynomial sectional curve fitting method, we finally obtained the calculated valence band discontinuity Δ E v=316 meV, corresponding to about 0.69 Δ E g.

关 键 词：铟镓磷 砷化镓 异质结界面 直接测量 半导体材料 

分 类 号：TN304.207[电子电信—物理电子学]