碳纳米管及其掺杂氧化物半导体气敏传感器  

Carbon nanotubes gas sensors and oxide semiconductor doping with carbon nanotubes gas sensors

作　　者：林毓韬[1] 徐涛[1] 柳清菊[1] 

机构地区：[1]云南大学云南省高校纳米材料与技术重点实验室,云南昆明650091

出　　处：《功能材料》2011年第7期1159-1162,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51062017)

摘　　要：碳纳米管气敏传感器以其工作温度低和最低检出限较低等优点而备受关注,而碳纳米管掺杂氧化物半导体气敏传感器兼备了氧化物半导体气敏传感器和碳纳米管气敏传感器二者的优点,具有灵敏度较高、最低检出限低和工作温度低等特性。综述了这两类传感器的研究进展,介绍了其气敏机理,并对相应存在的问题及今后的发展趋势进行了概述。Carbon nanotubes gas sensors are attracted more attentions for its exceptional properties of lower work temperature and detection limit.While the oxide semiconductor doping with carbon nanotubes gas sensors have the advantages both of carbon nanotubes gas sensors and oxide semiconductor gas sensors,such as higher sensitive,lower work temperature and detection limit.The progress and gas-sensing mechanism of this two kinds of gas sensors are introduced and summarized in this paper,and also the problems and developing tendency are pointed out.

关 键 词：碳纳米管 氧化物半导体 掺杂 气敏传感器 

分 类 号：X502[环境科学与工程—环境工程]