用掠入射XAFS方法研究Ti/Ni/Ti纳米薄膜的界面结构  

Characterizing interface structures of Ti/Ni/Ti thin films by grazing incidence XAFS

作　　者：于海生[1] 黄宇营[1] 魏向军[1] 姜政[1] 王建强[1] 顾颂琦[1] 张硕[1] 高星[1] 

机构地区：[1]中国科学院上海应用物理研究所,上海201204

出　　处：《核技术》2011年第7期489-493,共5页Nuclear Techniques

基　　金：中国科学院知识创新项目(KJCX2-YW-N43);上海市科委重点基金(09JC1417100);中科院上海应用物理所领域前沿项目(54O95501A);国家自然科学基金青年基金(10705046)资助

摘　　要：在上海光源BL14W1线站建立了掠入射XAFS(GI-XAFS)方法,利用GI-XAFS方法并结合X射线反射(XRR)研究了直流磁控溅射方法生长在W/Si基底上的Ti/Ni/Ti纳米薄膜的界面结构随Ni层厚度的变化。结果表明,随着薄膜厚度的增加,Ni/Ti界面层间的相互扩散有所增加,Ni层厚度为5 nm时,Ni/Ti界面层间的扩散厚度为2 nm左右;Ni层厚度为1 nm时,由于无序度较大,Ni-Ni配位和Ni-Ti配位的键长有所收缩;随着薄膜Ni层厚度的减小,无序度逐渐增加,Ni-Ti配位增加,Ni-Ni配位减少。Combined with X-ray reflectivity,interface structures of Ti/Ni/Ti thin films were studied by grazing incidence XAFS method.The films in different thicknesses of Ni layers（1 nm,3 nm and 5 nm） were prepared by DC magnetron sputtering.The GI-XAFS results indicate that the inter-diffusion of Ti/Ni/Ti interface layer increased with the Ni layer thickness,being about 2 nm with the sample of 5-nm thick Ni layer.For the sample of 1-nm Ni layer,,the bond lengths of Ni-Ni and Ni-Ti coordination had shrunk because of larger degree of disorder.As thickness of the Ni layer decreases,the degree of disorder gradually increases while the coordinations of Ni-Ti increase and the coordinations of Ni-Ni decrease.

关 键 词：掠入射 X射线吸收精细结构(XAFS) Ti/Ni/Ti薄膜 X射线反射(XRR) 

分 类 号：O434.19[机械工程—光学工程]