增强硅中掺铒发光强度的途径研究  

Investigation on Several Routes Towards High Luminescence Efficiency of Er-doped Silicon

作　　者：黄政[1] 胡浩[1] 

机构地区：[1]贵州大学光电子技术及应用重点实验室,贵州贵阳550025

出　　处：《现代电子技术》2011年第14期128-130,134,共4页Modern Electronics Technique

摘　　要：硅在微电子学领域有着极其广泛的应用,但它是一种间接能隙半导体,发光器件领域是它的缺项。利用在硅中掺入铒发光中心,研制出一种新的发光二极管(Si:Er LED),它的发光波长为1.54μm,恰好满足石英光纤通信的要求。对掺铒硅的电学特性、材料性能、发光机理等进行了总结,发现制约掺铒硅实用化的一些问题,在此基础上得出提高其发光效率的途径,并介绍了掺铒硅器件的行为和未来展望。Silicon has extensive application in the field of microelectronics, because of its indirect gap semiconductor, it is not applicable for the respect of luminescent device. A new LED （Si.. Er LED）with 1. 54 μm light wavelength has been developed by using erbium doped silicon, which is just fit for the request of silica fibre communication. To increase lumines- cence efficiency of Er-doped Silicon, a summarized review is given for some aspects including electrical properties, materials properties and luminescence mechanism. Moreover, several methods of imroving the luminescence efficiency and device per- formance are gained.

关 键 词：掺铒硅 发光二极管 发光效率 石英光纤通信 

分 类 号：TN204-34[电子电信—物理电子学]