低介电常数多孔氮化硅陶瓷材料的制备  

Preparation of Low Dielectric Constant Porous Silicon Nitride Ceramics

作　　者：吕艳红[1] 王洪升[1] 

机构地区：[1]山东工业陶瓷研究设计院,淄博255031

出　　处：《现代技术陶瓷》2011年第2期17-19,共3页Advanced Ceramics

摘　　要：采用有机泡沫前躯体浸渍工艺制备了低介电、低密度的氮化硅陶瓷。以氮化硅粉体为主要原料,制备粘度和流动性合适的水基料浆,并以软质聚氨酯泡沫塑料为载体,在真空状态下浸渍,然后在氧化气氛下排塑,在氮气气氛下烧结,得到了低介电常数的多孔氮化硅陶瓷材料。所制备的材料性能可达到:容积密度为0.12g/cm3、介电常数为1.15、介电损耗为4×10-4。通过XRD,SEM研究了试样在热处理过程中的物理、化学变化,烧结体的物相组成及其显微结构。In this study, silicon nitride ceramics with low dielectric and low - density were prepared by organic foam precursor impregnation process. Water - based slurry with suitable viscosity and fluidity was prepared using silicon nitride as raw material, soft polyurethane foam as a carrier impregnated in vacuum. The green body was pre - sintering in oxidizing atmosphere, and sintering nitrogen atmosphere. The density of the specimen is 0.12g/cm^3, while the dielectric constant and dielectric loss is 1.15 and 4 10 -4, respectively. The Phase analysis and Microstructure of the specimen were observed by X - ray diffraction and scanning electron microscopy.

关 键 词：介电常数 多孔陶瓷 氮化硅 

分 类 号：TQ174.758[化学工程—陶瓷工业]