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作 者:赵金博[1,2] 吴莉莉[1,2] 邹科[1,2] 于伟燕[1,2] 李高增[1,2]
机构地区:[1]山东大学材料液固结构演变与加工教育部重点实验室,济南250061 [2]山东大学材料科学与工程学院,济南250061
出 处:《人工晶体学报》2011年第3期594-598,共5页Journal of Synthetic Crystals
摘 要:采用溶胶-凝胶法,以离子液体为辅助溶剂,在玻璃衬底上制备了ZnO∶Al(ZAO)薄膜。通过X-射线衍射(XRD)、场发射扫描电镜(FE-SEM)、紫外-可见分光光度计(UV-Vis)和霍尔效应等测试手段,分析了不同Al掺杂浓度ZAO薄膜的微观结构、光学和电学性能。结果表明,所制备的薄膜为非(002)取向的多晶膜。随着Al离子掺杂浓度的提高,薄膜的(002)晶面取向增强,晶粒逐渐由片状向球形转变,电阻率先降低后升高。进一步研究发现,在还原气氛NH3下退火可显著降低薄膜的电阻率,Al掺杂浓度为1 mol%时,薄膜电阻率达到4.7×10-2Ω·cm,可见光透过率平均在80%以上。Transparent conductive ZAO films were prepared by sol-gel method on glass substrates assisted by ionic liquid.The effect of Al doping concentration on the microstructures,optical and electrical properties of the films were investigated by X-ray diffraction(XRD),field-emission scanning electron microscope and Hall effect measurement system.The results show that the samples are not grown along(002) direction.As the Al concentration increasing,the films grow more preferentially along the(002) direction and the average grain size gradually changes from flake to sphere.The resistivity of the thin film increases first and then decreases as the Al concentration increasing.The following study indicated that the resistivity decreases obviously when the films were annealed under NH3.The average transmittance of the films is more than 80% and the minimum resistivity is 4.7×10-2 Ω·cm when the Al concentration is 1 mol%.
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